NANOFAB 100 platform: MBE cluster

Molecular beam epitaxy cluster

This cluster contains:

 

• MBE GaAs module - MBE of A_IIIB_V compounds module
• MBE GaN module - MBE of group III nitrides module
• RDC module - UHV radial distribution module
• LS module - Module for sample loading and storage
• RT module - UHV module for sample revolution and transportation 
   

The molecular beam epitaxy cluster is intended for epitaxial growth of classic compositions of AIIIBV type and semiconductive heterostructures of III-group nitrides on substrates of up to 100 mm diameter.

It is also possible to grow materials of InAlGaN/GaN using ammonia as a source of active nitrogen.

• Cluster Overall dimensions - 360х280 cm.

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